High Purity Silicon Carbide (Hp-SiC)
High Purity Silicon Carbide (Hp-SiC)
High Purity Silicon Carbide (Hp-SiC)
High Purity Silicon Carbide is a premium-grade synthetic material engineered to meet the stringent requirements of semiconductor and advanced ceramic applications. With exceptionally low levels of metallic and alkali impurities, it ensures superior thermal conductivity, chemical resistance, and electrical insulation. High Purity SiC is critical in the fabrication of power electronics, high-frequency devices, heat-resistant components, and substrates for next-generation semiconductors. Its consistent microstructure, controlled particle size distribution, and high chemical purity also make it ideal for technical ceramics, wafer polishing, and other high-performance industrial processes.
Applications
Offerings
CUMI KRYSTA HPSiC 3N is a high-purity silicon carbide powder manufactured via
the Acheson Process using refined raw materials and carefully controlled
treatments to reduce impurity levels. It is ideal for use in technical ceramics and
semiconductor applications.
CHEMICAL COMPOSITION
CUMI KRYSTA HPSiC 4N is a very high-purity silicon carbide powder, also
produced through the Acheson Process. It utilizes superior-grade raw materials
and undergoes multi-stage purification processes to achieve even lower
impurity levels, making it suitable for advanced technical ceramics and
semiconductor applications.
CHEMICAL COMPOSITION
CUMI KRYSTA HPSiC 5N is an ultra-high purity silicon carbide specifically
engineered for the most critical semiconductor and advanced ceramic
applications. Its exceptional chemical uniformity and extremely low metallic
impurities make it an excellent choice for high-end electronic and ceramic
components.
CHEMICAL COMPOSITION
