Semiconductor
Semiconductor
Semiconductor
CUMI Krysta -High Purity Silicon Carbide (3N–5N grades) is engineered to meet the demanding requirements of next-generation semiconductor manufacturing. With exceptional purity, controlled particle size, and superior thermal and electrical properties, our HPSiC supports advanced processes with unmatched performance and reliability.
Applications
Offerings
CUMI KRYSTA HPSiC 3N is a high-purity silicon carbide powder manufactured via the Acheson Process using refined raw materials and carefully controlled treatments to reduce impurity levels. It is ideal for use in technical ceramics and semiconductor applications.
CHEMICAL COMPOSITION
CUMI KRYSTA HPSiC 4N is a very high-purity silicon carbide powder, also produced through the Acheson Process. It utilizes superior-grade raw materials and undergoes multi-stage purification processes to achieve even lower impurity levels, making it suitable for advanced technical ceramics and semiconductor applications.
CHEMICAL COMPOSITION
CUMI KRYSTA HPSiC 5N is an ultra-high purity silicon carbide specifically engineered for the most critical semiconductor and advanced ceramic applications. Its exceptional chemical uniformity and extremely low metallic impurities make it an excellent choice for high-end electronic and ceramic components.
CHEMICAL COMPOSITION
